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12. H.H.Erkaya, R.J.Roedel, R.Lareau, P.Williams, J.Leavitt, and A.Von Neida, "Anomalous Diffusion of Tin in GaAs," J.Electrochem.Soc., 132, 2214 (1985).
13. S.K.Ageno, R.J.Roedel, N.Mellin, and J.S.Escher, "Diffusion of Zinc into Ga1-xAlxAs," Appl.Phys.Lett., 47, 1193 (1985).
14. R.J.Graham, J.C.H.Spence, and R.J.Roedel, "TEM Cathodoluminescence Investigation of Anomalous Tin Diffusion in GaAs," J.Appl.Phys., 59, 164 (1986).
15. D.A.Johnson, S.Myhajlenko, J.L.Edwards, G.N.Maracas, R.J.Roedel, and H.Goronkin, "Imaging of Deep Level Domains in Semi-insulating GaAs by Voltage Contrast," Appl.Phys.Lett., 51, 1152 (1987).
16. R.J.Graham, H.H.Erkaya, and R.J.Roedel, "Preliminary Studies of Al-Ge-Ni Ohmic Contacts to p- and n-type GaAs," J.Electrochem.Soc., 135, 266 (1988).
17. R.J.Roedel, H.H.Erkaya, and J.L.Edwards, "Sputtered Dielectric Films for GaAs Diffusion Masks," J.Electron.Mat., 17, 243 (1988).
18. R.J.Graham, H.H.Erkaya, J.L.Edwards, and R.J.Roedel, "High Resolution Transmission Electron Microscope Studies of an Al-Ge-Ni Ohmic Contact to GaAs," J.Vac.Sci.Tech., B6, 1502 (1988).
19. R.J.Roedel, S.Myhajlenko, and J.L.Edwards, "Cathodoluminescence Investigation of Ga1-xAlxAs at Cryogenic Temperatures," J.Electrochem.Soc., 136, 1186 (1989).
20. N.F.Deutscher, R.J.Roedel, L.McIntyre, and J.Leavitt, "Ion Implantation into (Hg,Cd)Te through Dielectric Encapsulants," J.Vac.Sci.Tech., A8, 1143 (1990).
21. S.Myhajlenko, J.L.Edwards, K.L.Rowley, and R.J.Roedel, "Observations of Hg0.7Cd0.3Te Epilayers by Infrared Cathodoluminescence Detection," Scanning, 12, 81 (1990).
22. C.B.Wheeler, R.J.Roedel, R.W.Nelson, S.N.Schauer, and P.Williams, "Reproducible Leaky Tube Diffusion of Cd in InP at 500¡C," J.Appl.Phys., 68, 969 (1990).
23. R.J.Graham, R.W.Nelson, P.Williams, T.B.Haddock, E.P.Baaklini, and R.J.Roedel, "Investigation of the Electrical Properties and Structure of Al-Ge-Ni Contacts to GaAs," J.Electron.Mat., 19, 1257, 1990.
24. J.Wong and R.J.Roedel, "A Diffusion Model for Indium in Hg1-xCdxTe," J.Vac.Sci.Tech., A9, 2258,1991.
25. R.J.Roedel, K.L.Rowley, J.L.Edwards, and S.Myhajlenko, "Comparison of Etch Pit Distributions and Cathodoluminescence Images in Semi-insulating GaAs," J.Electrochem.Soc., 138, 3120, 1991.
26. T.E.Zirkle, S.Myhajlenko, N.S.Kang, R.J.Roedel, and D.K.Schroder, "Panchromatic and Spectral Characterization of Cu contaminated Semi-insulating GaAs," Scan.Micros., 6, 105, 1992.
27. S.Myhajlenko, M.Wong, J.L.Edwards, G.N.Maracas, and R.J.Roedel, "Spectrally Resolved Transmission Cathodoluminescence Evaluation of Vertical Cavity Surface Emitting Lasers," Scanning Microscopy, 6, 995, 1992.
28. R.J.Roedel, D.Davito, W.West, and R.Adams, "Ohmic contacts to p- and n-type GaAs made with Al-Sn-Ni," J.Electrochem.Soc., 140, 1450, 1993.
29. R.J.Roedel and H.Cutlerywala, "The use of anodic oxide films to control zinc diffusion in GaAs," J.Electrochem.Soc., 141, 1639, 1994.
30. R.J.Roedel, W.West, T.S.Lee, D.Davito, and R.Adams, "The fabrication of Ga1-xAlxAs/GaAs heterojunction bipolar junction transistors for rapid material analysis," IEEE Trans.Semi.Mfg., 8, 1, 1995.
31. T.L.Alford, A.E.Bair, Z.Atzmon, L.M.Stout, S.G.Balster, D.K.Schroder, R.J.Roedel, "Heteroepitaxial Si1-x-yGexCy films on (100) Si substrates for future low-power applications," Thin Solid Films, 270, 632, 1995.
32. S.G.Balster, R.J.Roedel, D.K.Schroder, D.J.Smith, A.E.Bair, T.L.Alford, P.Joshi, and R.Westhoff, " Si1-x-yGexCy Heterojunction Bipolar Transistors by Atmospheric Pressure Chemical Vapor Deposition," in review, IEEE El.Dev.Lett.