The following are a listing of the 'standard' processes that are commonly used. Any process within these ranges can be requested and completed without additional approval. If you are interested in a process that falls outside these 'standard' recipes, talk to CSSER staff about what you need and we will try to accommodate you if at all possible.

CMOS processes

i) Wet oxidation: 1050 degrees C - oxide thickness up to 500 nm

ii) Dry oxidation: 800 and 1000 degrees C - oxide thickness from 10 nm to 150 nm

iii) Poly-silicon deposition: 650 degrees C - film thickness up to 500 nm

iv) Nitride deposition: 800 degrees C  - film thickness up to 500 nm

v) Boron doping: 1000 degrees C - minimum sheet resistance ~ 25 Ohms/square

vi) Phosphorus doping: 975 degrees C - minimum sheet resistance ~ 15 Ohms/square

vii) Anneal: 450 degrees C

Metal Deposition

i) Edwards II Thermal Evaporator: 
available metals include: Cr (50 nm), Ni (100 nm), Au (250 nm), Ge (50 nm), AuGe (250 nm)

ii) Torvacc and CHA electron-beam evaporators:
available metals include: Ag, Al, Au, Cr, Ge, Ni, Pt and Ti up to 200 nm and amorphous silicon and silicon nitride up to 100 nm

iii) MRC sputter system:
available sputter targets include: Co, Mo, Ni, Ta, TiSi2, TiW, Si, SiO2 and W

Reactive Ion Etching

i) STS Inductively Coupled Plasma systems:
Tool 1 - Deep silicon etch running a Bosch process, 3 microns/min, up to 500 microns
Tool 2 - GaN, GaAs etch rates of ~ 1 micron/minute

ii) PlasmaLab systems
RIE#1 - running CF4/O2 chemistries with etch rates of ~ 30 nm/min for thermal oxides, 50 nm/min for LPCVD nitrides, and 30 nm/min for LPCVD poly-Si

RIE#2 - running CF4/SF6/O2 chemistries in the 'master' chamber and BCl3/Cl2 in the 'slave' chamber

Plasma Enhanced Chemical Vapor Deposition

PlasmaQuest Remote Plasma CVD for samples up to 4" in diameter
Deposits SiO2 at ~ 1 Angstrom/mi and Si3N4 at ?? Angstroms/min

Rapid Thermal Annealing

Tamarac for silicon samples only: max temp of 1200 degrees C

Heatpulse for various materials: max temp of 1200 degrees C

Jipilec for SiC: max temp of 1800 degrees C